PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON DIOXIDE USING TETRAETHYLORTHOSILICATE (TEOS)

被引：48
|
作者：
EMESH, IT
DASTI, G
MERCIER, JS
LEUNG, P
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 11期
关键词：
D O I：
10.1149/1.2096461
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：3404 / 3408
页数：5
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