PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON DIOXIDE USING TETRAETHYLORTHOSILICATE (TEOS)

被引：48

作者：

EMESH, IT

DASTI, G

MERCIER, JS

LEUNG, P

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 11期

关键词：

D O I：

10.1149/1.2096461

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3404 / 3408

页数：5

共 20 条

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[9] DEPOSITION OF SILICON DIOXIDE AND SILICON-NITRIDE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

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