EFFECT OF TRANSISTOR COLLECTOR DESIGN ON OPERATING VOLTAGE AND SECOND BREAKDOWN

被引:0
作者
REICH, B
机构
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:49 / &
相关论文
共 50 条
  • [41] On the bipolar transistor collector current at the onset of base-widening as a function of the collector-base voltage
    Karmalkar, S
    SOLID-STATE ELECTRONICS, 2003, 47 (06) : 951 - 955
  • [42] DARLINGTON CIRCUIT WITH HIGH COLLECTOR-EMITTER BREAKDOWN VOLTAGE.
    Brosch, R.
    Heimeier, H.
    Klein, W.
    Schaller, K.H.
    IBM technical disclosure bulletin, 1983, 26 (06):
  • [43] Influence of Operating Voltage on Breakdown Characteristics of HVDC GIL under Impulse Voltage
    Ma, Jingtan
    Zhang, Qiaogen
    Wu, Zhicheng
    Guo, Can
    Wen, Tao
    Liu, Lin
    Wang, Guoli
    Gao, Chao
    2018 12TH INTERNATIONAL CONFERENCE ON THE PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS (ICPADM 2018), 2018, : 1006 - 1009
  • [44] OPERATION OF A PLANAR TRANSISTOR IN MICRO-MODE DURING AVALANCHE BREAKDOWN OF COLLECTOR JUNCTION
    IGUMNOV, DV
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (09): : 1422 - &
  • [45] The design of the electron collector for retarding voltage analysis
    Skinner, HWB
    Piper, SH
    PHILOSOPHICAL MAGAZINE, 1929, 8 (50): : 313 - 319
  • [46] Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor
    Lin, YS
    APPLIED PHYSICS LETTERS, 2003, 83 (26) : 5545 - 5547
  • [47] Diamond Metal-Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV
    Umezawa, Hitoshi
    Matsumoto, Takeshi
    Shikata, Shin-Ichi
    IEEE ELECTRON DEVICE LETTERS, 2014, 35 (11) : 1112 - 1114
  • [48] Design of a 100 V High-side n-channel LDMOS Transistor for Breakdown Voltage Enhancement
    Sung, Kunsik
    Won, Taeyoung
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 59 (02) : 412 - 415
  • [49] EFFECT OF AVALANCHE MULTIPLICATION IN COLLECTOR JUNCTION ON TRANSISTOR CHARACTERISTICS
    BRUYLAND, I
    ARCHIV DER ELEKTRISCHEN UND UBERTRAGUNG, 1967, 21 (11): : 575 - &
  • [50] Analysis of collector-emitter offset voltage of InGaP/GaAs composite collector double heterojunction bipolar transistor
    Lew, KL
    Yoon, SF
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) : 4617 - 4622