ELECTRON TRAPPING IN SIO2 - AN INJECTION MODE DEPENDENT PHENOMENON

被引：16

作者：

EITAN, B

FROHMANBENTCHKOWSKY, D

SHAPPIR, J

BALOG, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 06期

关键词：

D O I：

10.1063/1.93128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：523 / 525

页数：3

共 20 条

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