PERTURBATION SOLUTION OF SELF-PULSING IN SEMICONDUCTOR-LASERS WITH A SATURABLE ABSORBER

被引:9
作者
LEE, CH [1 ]
SHIN, SY [1 ]
KANG, SG [1 ]
机构
[1] KOREA ADV INST SCI & TECHNOL,DEPT ELECT ENGN,YUSUNG KU,TAEJON,SOUTH KOREA
关键词
D O I
10.1109/3.299462
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We solve the three-component rate equations for semiconductor lasers with a saturable absorber or for multi-section semiconductor lasers by using a singular perturbation method. The effects of nonlinear gain and spontaneous emission are included in the rate equations. By transforming the rate equations to the generalized coordinates, we eliminate the most rapidly varying term adiabatically for the fast saturable absorber. Then, we solve the two-component nonlinear equations to obtain analytic expressions for parametric dependence of self-pulsing amplitude and self-pulsing frequency. The self-pulsing frequency shifts from the small-signal oscillation frequency to the lower-frequency side as we increase the self-pulsing amplitude. The square of the self-pulsing frequency does not linearly depend on the injection current, in agreement with experimental observations. We also derive an optimum saturable absorber recovery time for the shortest optical pulse generation.
引用
收藏
页码:1396 / 1404
页数:9
相关论文
共 19 条
[1]  
AGAWAL GP, 1987, IEEE J QUANTUM ELECT, V23, P860
[2]   ALL-OPTICAL CLOCK RECOVERY FROM 2.5GBIT/S NRZ DATA USING SELFPULSATING 1.58 MU-M LASER DIODE [J].
BARNSLEY, PE ;
WICKES, HJ .
ELECTRONICS LETTERS, 1992, 28 (01) :4-6
[3]   SEMI-CONDUCTOR-LASER SELF PULSING DUE TO DEEP LEVEL TRAPS [J].
COPELAND, JA .
ELECTRONICS LETTERS, 1978, 14 (25) :809-810
[4]   POSSIBLE MODEL FOR SUSTAINED OSCILLATIONS (PULSATIONS) IN (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS [J].
DIXON, RW ;
JOYCE, WB .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (06) :470-474
[5]   800 MB/S MICROWAVE FSK USING A SELF-PULSATING COMPACT-DISK LASER DIODE [J].
GEORGES, JB ;
LAU, KY .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (06) :662-665
[6]   THEORY OF DEFECT-INDUCED PULSATIONS IN SEMICONDUCTOR INJECTION-LASERS [J].
HENRY, CH .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3051-3061
[7]   GAIN NONLINEARITIES DUE TO CARRIER DENSITY DEPENDENT DISPERSION IN SEMICONDUCTOR-LASERS [J].
HJELME, DR ;
MICKELSON, AR .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (07) :1625-1631
[8]   SUBPICOSECOND GAIN DYNAMICS IN GAALAS LASER-DIODES [J].
KESLER, MP ;
IPPEN, EP .
APPLIED PHYSICS LETTERS, 1987, 51 (22) :1765-1767
[9]   TRANSFORMATION OF RATE-EQUATIONS AND APPROXIMATE TRANSIENT SOLUTIONS FOR SEMICONDUCTOR-LASERS [J].
LEE, CH ;
SHIN, SY .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (05) :878-884
[10]  
LEE CH, 1989, INT C INTEGRATED OPT, P70