Thickness Determination of Graphene Layers Formed on SiC Using Low-Energy Electron Microscopy

被引：38

作者：

Hibino, H. ^{[1
]}

Kageshima, H. ^{[1
]}

Maeda, F. ^{[1
]}

Nagase, M. ^{[1
]}

Kobayashi, Y. ^{[1
]}

Yamaguchi, H. ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2008年 / 6卷

关键词：

Low-energy electron microscopy (LEEM); Electron-solid scattering and transmission; Silicon carbide; Graphene;

D O I：

10.1380/ejssnt.2008.107

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Low-energy electron microscopy (LEEM) has been used to measure reflectivity of low-energy electrons for graphene layers grown on Si-terminated 6H-SiC(0001) and 4H-SiC(0001) substrates and C-terminated 4H-SiC(0001) substrates. We observe quantized oscillations in the reflectivity on all the substrates. The number of graphene layers grown on both the Si-terminated and C-terminated substrates can be determined microscopically as the number of dips in the reflectivity between 0 and 7 eV. We also find that the dips appear closer to the vacuum level on the C-terminated substrates than on the Si-terminated substrates. This could be explained by the differences in the work function and Fermi level position between the graphene layers grown on the Si-terminated and C-terminated substrates.

引用

页码：107 / 110

页数：4