EFFECT OF HYDROGEN PLASMA TREATMENT ON IMPLANTATION DAMAGE IN DIAMOND FILMS GROWN BY CHEMICAL VAPOR-DEPOSITION

被引：12
作者：
MORI, Y
DEGUCHI, M
EIMORI, N
MA, JS
NISHIMURA, K
KITABATAKE, M
ITO, T
HIRAO, T
HIRAKI, A
机构：
[1] MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
[2] OSAKA DIAMOND IND CO LTD, SAKAI, OSAKA 593, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 8B期
关键词：
IMPLANTATION DAMAGE; GRAPHITIZATION; HYDROGEN PLASMA TREATMENT; ELECTRON ENERGY LOSS SPECTROSCOPY; DIAMOND FILM;
D O I：
10.1143/JJAP.31.L1191
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Radiation damage in chemical vapour deposited (CVD) diamond produced by the implantation of 10-keV nitrogen ions has been studied using electron energy loss spectroscopy (EELS) and cathodoluminescence. Thermal annealing and a hydrogen plasma treatment have been employed to anneal out the implantation damage. Graphitization of ion implanted CVD diamond was observed after subsequent thermal annealing. On the other hand, similar EELS spectra to that of as-grown diamond have been obtained from ion-implanted CVD diamond after hydrogen plasma treatment.
引用
收藏
页码：L1191 / L1194
页数：4
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