EPITAXIAL N+ LAYER GAAS MESA-FINGER INTERDIGITAL SURFACE PHOTODETECTORS

被引：10

作者：

DARLING, RB ^{[1
]}

NABET, B ^{[1
]}

SAMARAS, JE ^{[1
]}

RAY, S ^{[1
]}

CARTER, EL ^{[1
]}

机构：

[1] BOEING CO,CTR ELECTR HIGH TECHNOL,SEATTLE,WA 98124

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 10期

关键词：

D O I：

10.1109/55.43100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：461 / 463

页数：3

共 8 条

[1]

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[6] A MONOLITHIC 4-CHANNEL PHOTORECEIVER INTEGRATED ON A GAAS SUBSTRATE USING METAL-SEMICONDUCTOR-METAL PHOTODIODES AND FETS [J].

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[7] METAL-SEMICONDUCTOR-METAL PHOTODETECTOR FOR HIGH-SPEED OPTOELECTRONIC CIRCUITS [J].

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[8]

SUGETA T, 1979, 11TH P INT C SOL STA

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