TRENDS IN ADVANCED PROCESS TECHNOLOGY - SUBMICROMETER CMOS DEVICE DESIGN AND PROCESS REQUIREMENTS

被引:19
作者
BROWN, DM
GHEZZO, M
PIMBLEY, JM
机构
[1] GE, Schenectady, NY, USA, GE, Schenectady, NY, USA
关键词
D O I
10.1109/PROC.1986.13685
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
137
引用
收藏
页码:1678 / 1702
页数:25
相关论文
共 153 条
[1]  
ADAMS AC, 1979, J ELECTROCHEM SOC, V126, P423
[2]   DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J].
ALPERIN, ME ;
HOLLAWAY, TC ;
HAKEN, RA ;
GOSMEYER, CD ;
KARNAUGH, RV ;
PARMANTIE, WD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :141-149
[3]  
ASAI S, 1985, 32ND P ANN S AM VAC
[4]   OPTIMAL INTERCONNECTION CIRCUITS FOR VLSI [J].
BAKOGLU, HB ;
MEINDL, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) :903-909
[5]  
BARTON D, 1985, JAN P SEM INT, P98
[6]  
BARTON D, 1984, IEEE VLSI MULTILEVEL, P268
[7]   DELAY ANALYSIS OF SI NMOS GBIT/S LOGIC-CIRCUITS [J].
BAYRUNS, RJ ;
JOHNSTON, RL ;
FRASER, DL ;
FANG, SC .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1984, 19 (05) :755-764
[8]  
BONIFIELD TD, 1984, OCT SRC TOP RES C IN
[9]  
BOYLE L, 1984, ELECTRONICS MAG 0405, P138
[10]   CHARACTERIZATION OF TRANSIENT PROCESS PHENOMENA USING A TEMPERATURE-TOLERANT METALLURGY [J].
BRONNER, GB ;
PLUMMER, JD .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) :75-77