VERY HIGH-FREQUENCY GAALAS LASER FIELD-EFFECT TRANSISTOR MONOLITHIC INTEGRATED-CIRCUIT

被引：30

作者：

URY, I ^{[1
]}

LAU, KY ^{[1
]}

BARCHAIM, N ^{[1
]}

YARIV, A ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 02期

关键词：

D O I：

10.1063/1.93425

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：126 / 128

页数：3

共 9 条

[1] BURIED HETEROSTRUCTURE ALGAAS LASERS ON SEMI-INSULATING SUBSTRATES [J].

BARCHAIM, N ;

KATZ, J ;

URY, I ;

YARIV, A .

ELECTRONICS LETTERS, 1981, 17 (03) :108-109

[2]

BARCHAIM N, 1982, APPL PHYS LETT, V40, P566

[3] MONOLITHIC INTEGRATION OF A GAALAS INJECTION-LASER WITH A SCHOTTKY-GATE FIELD-EFFECT TRANSISTOR [J].

FUKUZAWA, T ;

NAKAMURA, M ;

HIRAO, M ;

KURODA, T ;

UMEDA, J .

APPLIED PHYSICS LETTERS, 1980, 36 (03) :181-183

[4] IMPROVEMENT OF DRAIN BREAKDOWN VOLTAGE OF GAAS POWER MESFETS BY A SIMPLE RECESS STRUCTURE [J].

FURUTSUKA, T ;

TSUJI, T ;

HASEGAWA, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :563-567

[5] MONOLITHIC INTEGRATION OF A VERY LOW THRESHOLD GAINASP LASER AND METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON SEMI-INSULATING INP [J].

KOREN, U ;

YU, KL ;

CHEN, TR ;

BARCHAIM, N ;

MARGALIT, S ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :643-645

[6]

LAU KH, UNPUB

[7]

LIU PL, 1980, TOPICAL M PICOSECOND

[8] MONOLITHICALLY INTEGRATED OPTICAL REPEATER [J].

YUST, M ;

BARCHAIM, N ;

IZADPANAH, SH ;

MARGALIT, S ;

URY, I ;

WILT, D ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :795-797

[9]

HITACHI HLP LASER DI, P22

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