VOLTAGE DEPENDENCE OF THE DARK AND PHOTOCURRENTS IN SEMICONDUCTOR-ELECTROLYTE JUNCTIONS

被引：36

作者：

ELGUIBALY, F ^{[1
]}

COLBOW, K ^{[1
]}

FUNT, BL ^{[1
]}

机构：

[1] SIMON FRASER UNIV,DEPT CHEM,BURNABY V5A 1S6,BC,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 05期

关键词：

D O I：

10.1063/1.329124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3480 / 3483

页数：4

共 13 条

[1] PHOTOELECTROLYSIS AND PHYSICAL-PROPERTIES OF SEMICONDUCTING ELECTRODE WO3
BUTLER, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1914 - 1920
[2] STUDY OF N-TYPE SEMICONDUCTING CADMIUM CHALCOGENIDE-BASED PHOTOELECTROCHEMICAL CELLS EMPLOYING POLYCHALCOGENIDE ELECTROLYTES
ELLIS, AB
KAISER, SW
BOLTS, JM
WRIGHTON, MS
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1977, 99 (09) : 2839 - 2848
[3] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS
GARTNER, WW
[J]. PHYSICAL REVIEW, 1959, 116 (01): : 84 - 87
[4] Gerischer H., 1979, Solar energy conversion. Solid-state physics aspects, P115
[5] GROVE AS, 1967, PHYS TECHNOL S, P186
[6] EFFECT OF SURFACE RECOMBINATION ON CURRENT IN ALXGA1-XAS HETEROJUNCTIONS
HENRY, CH
LOGAN, RA
MERRITT, FR
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3530 - 3542
[7] THE CURRENT-VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR-ELECTROLYTE JUNCTION PHOTO-VOLTAIC CELLS
REICHMAN, J
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 574 - 577
[8] PHOTOCHARACTERISTICS FOR ELECTROLYTE-SEMICONDUCTOR JUNCTIONS
REISS, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) : 937 - 949
[9] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
[10] NONEQUILIBRIUM STEADY-STATE STATISTICS AND ASSOCIATED EFFECTS FOR INSULATORS AND SEMICONDUCTORS CONTAINING AN ARBITRATY DISTRIBUTION OF TRAPS
SIMMONS, JG
TAYLOR, GW
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02): : 502 - &

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