VOLTAGE DEPENDENCE OF THE DARK AND PHOTOCURRENTS IN SEMICONDUCTOR-ELECTROLYTE JUNCTIONS

被引:36
作者
ELGUIBALY, F [1 ]
COLBOW, K [1 ]
FUNT, BL [1 ]
机构
[1] SIMON FRASER UNIV,DEPT CHEM,BURNABY V5A 1S6,BC,CANADA
关键词
D O I
10.1063/1.329124
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3480 / 3483
页数:4
相关论文
共 13 条
[1]   PHOTOELECTROLYSIS AND PHYSICAL-PROPERTIES OF SEMICONDUCTING ELECTRODE WO3 [J].
BUTLER, MA .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :1914-1920
[2]   STUDY OF N-TYPE SEMICONDUCTING CADMIUM CHALCOGENIDE-BASED PHOTOELECTROCHEMICAL CELLS EMPLOYING POLYCHALCOGENIDE ELECTROLYTES [J].
ELLIS, AB ;
KAISER, SW ;
BOLTS, JM ;
WRIGHTON, MS .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1977, 99 (09) :2839-2848
[3]   DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].
GARTNER, WW .
PHYSICAL REVIEW, 1959, 116 (01) :84-87
[4]  
Gerischer H., 1979, Solar energy conversion. Solid-state physics aspects, P115
[5]  
GROVE AS, 1967, PHYS TECHNOL S, P186
[6]   EFFECT OF SURFACE RECOMBINATION ON CURRENT IN ALXGA1-XAS HETEROJUNCTIONS [J].
HENRY, CH ;
LOGAN, RA ;
MERRITT, FR .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3530-3542
[8]   PHOTOCHARACTERISTICS FOR ELECTROLYTE-SEMICONDUCTOR JUNCTIONS [J].
REISS, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) :937-949
[9]   CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].
SAH, CT ;
NOYCE, RN ;
SHOCKLEY, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243
[10]   NONEQUILIBRIUM STEADY-STATE STATISTICS AND ASSOCIATED EFFECTS FOR INSULATORS AND SEMICONDUCTORS CONTAINING AN ARBITRATY DISTRIBUTION OF TRAPS [J].
SIMMONS, JG ;
TAYLOR, GW .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02) :502-&