LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF TLINXGA1-XS2 LAYER MIXED-CRYSTALS

被引：11
作者：
ALLAKHVERDIEV, KR [1 ]
GASANLY, NM [1 ]
AYDINLI, A [1 ]
机构：
[1] BILKENT UNIV,DEPT PHYS,BILKENT 06533,TURKEY
来源：
SOLID STATE COMMUNICATIONS | 1995年 / 94卷 / 09期
关键词：
SEMICONDUCTORS; FERROELECTRICS; OPTICAL PROPERTIES; PHASE TRANSITIONS; LUMINESCENCE;
D O I：
10.1016/0038-1098(95)00037-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Low-temperature photoluminescence spectra of TlInS2, TlIn0.95 Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374eV (A), 2.570 eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that the crystal undergoes structural phase transitions. Band A is considered to come from a donor-acceptor recombination channel.
引用
收藏
页码：777 / 782
页数：6
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