INFRARED REFLECTION STUDIES OF CERAMICS - CHARACTERIZATION OF SIC LAYERS ON GRAPHITE SUBSTRATES

被引:5
作者
HOPFE, V
GRAHLERT, W
BRENNFLECK, K
KORTE, EH
THEISS, W
机构
[1] SCHUNK KOHLENSTOFFTECH GMBH,W-6300 GIESSEN,GERMANY
[2] INST SPEKTROCHEM & ANGEW SPEKTROSKOPIE,W-4600 DORTMUND,GERMANY
[3] RHEIN WESTFAL TH AACHEN,INST PHYS 1,W-5100 AACHEN,GERMANY
来源
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1993年 / 346卷 / 1-3期
关键词
D O I
10.1007/BF00321391
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Technical CVD-grown silicon carbide (beta-SiC) layers on graphite substrates have been studied by infrared spectroscopy. Specular reflectance spectra were measured at oblique incidence, and for the same experimental conditions such spectra were simulated starting from oscillator parameters which basically determine the optical behaviour of the material. Both the roughness of the surface and the roughness of the interface within the coated material, have considerable influence on the spectra. Modelling these zones as gradient layers on the basis of effective-medium approximations, convincing agreement between experiment and simulation can be obtained. In this way the effective dielectric function of the layer, as well as its thickness, are derived. Certain features within the reststrahlen band can be assigned to the excitation of surface phonons which strongly depend on the morphology of the layer.
引用
收藏
页码:99 / 103
页数:5
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