TECHNOLOGY OF GALLIUM ARSENIDE

被引:36
|
作者
CUNNELL, FA
EDMOND, JT
HARDING, WR
机构
关键词
D O I
10.1016/0038-1101(60)90041-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:97 / &
相关论文
共 50 条
  • [21] GALLIUM ALUMINUM ARSENIDE GALLIUM-ARSENIDE INTEGRATED OPTICAL REPEATER
    BARCHAIM, N
    LAU, KY
    URY, I
    YARIV, A
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 466 : 65 - 68
  • [22] GALLIUM DIFFUSION IN GALLIUM-ARSENIDE
    PALFREY, HD
    WILLOUGHBY, AFW
    BROWN, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C93 - C93
  • [23] MAGNETORESISTANCE IN GALLIUM ARSENIDE
    WILLARDSON, RK
    DUGA, JJ
    PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 75 (482): : 280 - 290
  • [24] ANON - GALLIUM ARSENIDE
    KING, G
    CONTEMPORARY PHYSICS, 1967, 8 (05) : 526 - &
  • [25] GALLIUM-ARSENIDE
    HARRISON, RJ
    OCCUPATIONAL MEDICINE-STATE OF THE ART REVIEWS, 1986, 1 (01): : 49 - 58
  • [26] Gallium arsenide heterostructures
    Donkor, E
    PROCESSING AND PROPERTIES OF COMPOUND SEMICONDUCTORS, 2001, 73 : 15 - 62
  • [27] PIEZOREFLECTIVITY OF GALLIUM ARSENIDE
    WELLS, JE
    HANDLER, P
    PHYSICAL REVIEW B, 1971, 3 (04): : 1315 - &
  • [28] PIEZOREFLECTIVITY OF GALLIUM ARSENIDE
    WELLS, JE
    HANDLER, P
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 289 - &
  • [29] ETCHANT FOR GALLIUM ARSENIDE
    NASLEDOV, DN
    PATRAKOVA, AI
    TSARENKOV, BV
    SOVIET PHYSICS-TECHNICAL PHYSICS, 1958, 3 (04): : 726 - 728
  • [30] ANON - GALLIUM ARSENIDE
    不详
    ELECTRONICS, 1967, 40 (17): : 174 - &