LOW-ENERGY ELECTRON-DIFFRACTION STUDY OF THE SURFACE-DEFECT STRUCTURE OF GE GROWN EPITAXIALLY ON GAAS(110)

被引：4
|
作者：
CLEARFIELD, HM [1 ]
WELKIE, DG [1 ]
LAGALLY, MG [1 ]
机构：
[1] UNIV WISCONSIN,CTR MAT SCI,MADISON,WI 53706
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期
关键词：
D O I：
10.1116/1.570951
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：802 / 803
页数：2
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