PREPARATION OF THIN FILMS OF VANADIUM (DI- SESQUI- AND PENT-) OXIDE

被引：41

作者：

ROZGONYI, GA

POLITO, WJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 01期

关键词：

D O I：

10.1149/1.2411003

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：56 / +

页数：1

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[11] PREPARATION AND PROPERTIES OF VANADIUM DIOXIDE FILMS [J].

MACCHESNEY, JB ;

POTTER, JF ;

GUGGENHEIM, HJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) :52-+

[12] EFFECT OF PRESSURE ON METAL-TO-INSULATOR TRANSITION IN V2O4 + V2O3 [J].

MINOMURA, S ;

NAGASAKI, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (01) :131-+

[13] OXIDES WHICH SHOW A METAL-TO-INSULATOR TRANSITION AT THE NEEL TEMPERATURE [J].

MORIN, FJ .

PHYSICAL REVIEW LETTERS, 1959, 3 (01) :34-36

[14] PREPARATION OF ZNO THIN FILMS BY SPUTTERING OF COMPOUND IN OXYGEN AND ARGON - (0.1 TO 10 MU THICK - SUBSTRATES - SAPPHIRE PYREX GLASS GOLD PLATE - ULTRASONICS - PIEZOELECTRICS - TRANSDUCERS - E) [J].

ROZGONYI, GA ;

POLITO, WJ .

APPLIED PHYSICS LETTERS, 1966, 8 (09) :220-&

[15] NEW GROWING METHOD FOR VO2 SINGLE CRYSTALS [J].

SASAKI, H ;

WATANABE, A .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (09) :1748-+