THE (001) SURFACE OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS STUDIED BY SCANNING TUNNELING MICROSCOPY

被引：43

作者：

PASHLEY, MD ^{[1
]}

HABERERN, KW ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584198

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1468 / 1471

页数：4

共 7 条

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[6] STRUCTURE OF GAAS(001) (2X4)-C(2X8) DETERMINED BY SCANNING TUNNELING MICROSCOPY [J].

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PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2176-2179

[7] THE EFFECT OF COOLING RATE ON THE SURFACE RECONSTRUCTION OF ANNEALED SILICON(111) STUDIED BY SCANNING TUNNELING MICROSCOPY AND LOW-ENERGY ELECTRON-DIFFRACTION [J].

PASHLEY, MD ;

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FRIDAY, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02) :488-492

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