A DIELECTRICALLY ISOLATED PHOTODIODE ARRAY BY SILICON-WAFER DIRECT BONDING

被引：20

作者：

OHURA, J

TSUKAKOSHI, T

FUKUDA, K

SHIMBO, M

OHASHI, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 10期

关键词：

D O I：

10.1109/EDL.1987.26692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：454 / 456

页数：3

共 12 条

[1]

ARIKADO T, 1985 P DRY PROC S, P114

[2] CHARACTERISTICS OF SOI CMOS CIRCUITS MADE IN N/N+/N OXIDIZED POROUS SILICON STRUCTURES [J].

BARLA, K ;

BOMCHIL, G ;

HERINO, R ;

MONROY, A ;

GRIS, Y .

ELECTRONICS LETTERS, 1986, 22 (24) :1291-1293

[3] HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J].

CELLER, GK ;

HEMMENT, PLF ;

WEST, KW ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1986, 48 (08) :532-534

[4] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[5] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].

GAT, A ;

GERZBERG, L ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

HONG, JD .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :775-778

[6] A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON [J].

IMAI, K .

SOLID-STATE ELECTRONICS, 1981, 24 (02) :159-&

[7] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

IZUMI, K ;

DOKEN, M ;

ARIYOSHI, H .

ELECTRONICS LETTERS, 1978, 14 (18) :593-594

[8]

LASKY JB, 1985, IEDM, P648

[9] DIELECTRICALLY ISOLATED SATURATING CIRCUITS [J].

LEE, FH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (09) :645-&

[10]

Ohashi H., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P210

← 1 2 →