A NEW ALGAAS/GAAS HETEROJUNCTION FET WITH INSULATED GATE STRUCTURE (MISSFET)

被引：21

作者：

HOTTA, T

SAKAKI, H

OHNO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 02期

关键词：

D O I：

10.1143/JJAP.21.L122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L122 / L124

页数：3

共 10 条

[1] STABLE CHARGE STORAGE OF MAOS DIODES ON GAAS BY NEW ANODIC-OXIDATION [J].

BAYRAKTAROGLU, B ;

HANNAH, SJ ;

HARTNAGEL, HL .

ELECTRONICS LETTERS, 1977, 13 (02) :45-46

[2] SHUBNIKOV-DEHAAS OSCILLATIONS IN A SEMICONDUCTOR SUPERLATTICE [J].

CHANG, LL ;

SAKAKI, H ;

CHANG, CA ;

ESAKI, L .

PHYSICAL REVIEW LETTERS, 1977, 38 (25) :1489-1493

[3] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J].

DELAGEBEAUDEUF, D ;

DELESCLUSE, P ;

ETIENNE, P ;

LAVIRON, M ;

CHAPLART, J ;

LINH, NT .

ELECTRONICS LETTERS, 1980, 16 (17) :667-668

[4] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[5] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J].

HASEGAWA, H ;

HARTNAGEL, HL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :713-723

[6]

Judaprawira S., 1981, IEEE Electron Device Letters, VEDL-2, P14, DOI 10.1109/EDL.1981.25322

[7] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

FUJII, T ;

NANBU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227

[8]

SAKAKI H, 1977, B AM PHYS SOC, V22, P460

[9] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE [J].

STORMER, HL ;

DINGLE, R ;

GOSSARD, AC ;

WIEGMANN, W ;

STURGE, MD .

SOLID STATE COMMUNICATIONS, 1979, 29 (10) :705-709

[10] THEORETICAL CHARACTERIZATION AND HIGH-SPEED PERFORMANCE EVALUATION OF GAAS IGFETS [J].

YAMAGUCHI, K ;

TAKAHASHI, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) :581-587

← 1 →