GROWTH OF DISLOCATIONS DURING LASER MELTING AND SOLIDIFICATION

被引：11
作者：
NARAYAN, J
YOUNG, FW
机构：
[1] Solid State Division, Oak Ridge National Laboratory, Oak Ridge
来源：
APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 04期
关键词：
D O I：
10.1063/1.91110
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Silicon crystals containing dislocations which terminated in the free surface were melted to depths of about 0.5 μm by rube-laser pulses, and the growth characteristics of dislocations of various types were studied by transmission electron microscopy. It was found that both edge- and screw-type dislocations grew in 〈113〉 directions that were not normal to the crystal-growth interface.
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页码：330 / 332
页数：3
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