INFLUENCE OF STRESS ON THE PHOTOLUMINESCENCE OF POROUS SILICON STRUCTURES

被引：66

作者：

FRIEDERSDORF, LE

SEARSON, PC

PROKES, SM

GLEMBOCKI, OJ

MACAULAY, JM

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 18期

关键词：

D O I：

10.1063/1.107056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The blueshifting of photoluminescence spectra of porous silicon structures formed in p-type silicon is shown to be related to stresses in the porous material. A characteristic cellular structure, with varying length scale, is observed in the high porosity films due to high surface stresses. The cellular structure is not formed during the secondary open-circuit etching procedure itself but occurs during evaporation of the electrolyte after removal of the porous silicon from the etching solution.

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页码：2285 / 2287

页数：3

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