INTERFACE TRAPS AND INTERFACE RECOMBINATION IN ALGAAS/GAAS QUANTUM-WELL LASER-DIODES

被引：7
作者：
XIE, K [1 ]
WIE, CR [1 ]
VARRIANO, JA [1 ]
WICKS, GW [1 ]
机构：
[1] UNIV ROCHESTER,INST OPT,ROCHESTER,NY 14627
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 04期
关键词：
D O I：
10.1063/1.106624
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The current-voltage characteristics and deep traps of various GaAs/AlGaAs graded-index separate confinement heterostructure quantum well laser diode structures are studied as a function of the growth temperature and threshold current. It is shown that the interface nonradiative recombination processes cause a high threshold current. An impurity-related deep level with activation energy E(a) = 0.48 eV at the interface region and an interface state with wide energy distribution were found in the high threshold current diodes. The current-voltage characteristics show that interface recombination, rather than bulk recombination, is the dominant carrier transport process in the diodes and is responsible for the high threshold current.
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页码：428 / 430
页数：3
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