ANALYSIS OF THE PRETRANSITION RANGE OF THE METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS

被引：17
作者：
NEUMARK, GF
机构：
[1] Philips Laboratories, Briarcliff Manor
来源：
PHYSICAL REVIEW B | 1979年 / 20卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.20.1519
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Various theories of the metal-insulator transition have been considered in regard to their likely importance in the doping range prior to this transition, and screening appears to dominate. It is then shown that screening through its effect on impurity energies and radii can explain the various activation energies in this range. This is consistent with the recent conclusion that the screening model can explain the temperature dependence of Hall data. © 1979 The American Physical Society.
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页码：1519 / 1526
页数：8
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