ANALYSIS OF THE PRETRANSITION RANGE OF THE METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS

Various theories of the metal-insulator transition have been considered in regard to their likely importance in the doping range prior to this transition, and screening appears to dominate. It is then shown that screening through its effect on impurity energies and radii can explain the various activation energies in this range. This is consistent with the recent conclusion that the screening model can explain the temperature dependence of Hall data. © 1979 The American Physical Society.