BINDING-ENERGY CALCULATIONS FOR MULTIPLE BOUND EXCITONS IN SILICON

被引：11

|

作者：

WUNSCHE, HJ ^{[1
]}

KHARTSIEV, VE ^{[1
]}

HENNEBERGER, K ^{[1
]}

机构：

[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1978年 / 85卷 / 01期

关键词：

D O I：

10.1002/pssb.2220850160

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：K53 / K56

页数：4

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