OVER 40 GBIT/S ULTRAHIGH-SPEED MULTIPLEXER IC IMPLEMENTED WITH HIGH FMAXALGAAS/GAAS HBTS

被引:14
作者
KURIYAMA, Y
ASAKA, M
SUGIYAMA, T
IIZUKA, N
OBARA, M
机构
[1] Materials and Devices Research Laboratories, Toshiba Research and Development Center, Toshiba Corporation, 1 Komukai Toshibacho, Saiwaiku, Kawasaki
关键词
HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUITS; MULTIPLEXING;
D O I
10.1049/el:19940313
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An ultrahigh-speed multiplexer (MUX) circuit has been developed for future optical transmission systems. The IC was fabricated with 160 Hz f(max) AlGaAs/GaAs HBTs. Error-free 40Gbit/s operation with an 0.8V peak-to-peak output voltage swing was confirmed. Its 50Gbit/s operation with an output voltage swing of 0.3V peak-to-peak was also verified. These are, to the authors' knowledge, the fastest operation speeds ever reported for a MUX IC implemented with any type of device.
引用
收藏
页码:401 / 402
页数:2
相关论文
共 7 条
  • [1] FELDER A, 1993, ISSCC 93, P156
  • [2] 28 GBIT/S SELECTOR IC USING ALGAAS/GAAS HBTS
    ICHINO, H
    YAMAUCHI, Y
    NITTONO, T
    NAGATA, K
    NAKAJIMA, O
    [J]. ELECTRONICS LETTERS, 1991, 27 (08) : 636 - 637
  • [3] KURIYAMA Y, 1992 P IEICE FALL C
  • [4] MATSUOKA Y, 1993, IEICE T ELECTRON C, V76
  • [5] ALGAAS/GAAS HBTS FABRICATED BY A SELF-ALIGNMENT TECHNOLOGY USING POLYIMIDE FOR ELECTRODE SEPARATION
    MORIZUKA, K
    ASAKA, M
    IIZUKA, N
    TSUDA, K
    OBARA, M
    [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) : 598 - 600
  • [6] 25 GBIT/S SELECTOR MODULE USING 0.2-MU-M GAAS-MESFET TECHNOLOGY
    OHHATA, M
    TOGASHI, M
    MURATA, K
    YAMAGUCHI, S
    [J]. ELECTRONICS LETTERS, 1993, 29 (11) : 950 - 951
  • [7] SUGIYAMA T, 1994, JPN J APPL PHYS 1, V33