DISSOCIATIVE SURFACE-REACTIONS AT SCHOTTKY AND HETEROJUNCTION INTERFACES WITH ALAS AND GAAS

被引：23

作者：

BAUER, RS ^{[1
]}

BACHRACH, RZ ^{[1
]}

HANSSON, GV ^{[1
]}

CHIARADIA, P ^{[1
]}

机构：

[1] STANFORD SYNCHROTRON RADIAT LAB, STANFORD, CA 94305 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571083

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：674 / 680

页数：7

共 38 条

[1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].

ANDREWS, JM ;

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59

[2] SURFACE-REACTIONS AND INTERDIFFUSION [J].

BACHRACH, RZ ;

BAUER, RS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1149-1153

[3] SURFACE PHASES OF GAAS(100) AND ALAS(100) [J].

BACHRACH, RZ ;

BAUER, RS ;

CHIARADIA, P ;

HANSSON, GV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :797-801

[4]

BACHRACH RZ, 1979, I PHYS C SER, V43, P1073

[5]

BACHRACH RZ, 1981, J VAC SCI T, V19

[6]

Bauer R.S., 1980, PHYSICS MOS INSULATO, P221

[7] AU AND AL INTERFACE REACTIONS WITH SIO2 [J].

BAUER, RS ;

BACHRACH, RZ ;

BRILLSON, LJ .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :1006-1008

[8] GE-GAAS(110) INTERFACE FORMATION [J].

BAUER, RS ;

MCMENAMIN, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1444-1449

[9] ATOMIC MODULATION OF INTER-DIFFUSION AT AU-GAAS INTERFACES [J].

BRILLSON, LJ ;

MARGARITONDO, G ;

STOFFEL, NG .

PHYSICAL REVIEW LETTERS, 1980, 44 (10) :667-670

[10] ATOMIC INTER-DIFFUSION AT AU-GAAS INTERFACES STUDIED WITH AL INTERLAYERS [J].

BRILLSON, LJ ;

BAUER, RS ;

BACHRACH, RZ ;

HANSSON, G .

PHYSICAL REVIEW B, 1981, 23 (12) :6204-6215

← 1 2 3 4 →