THERMAL QUENCHING OF THE PHOTOCONDUCTIVITY OF MANGANESE-COMPENSATED SILICON

被引：0

作者：

BAKHADYRKHANOV, MK

TURSUNOV, AA

KHAIDAROV, K

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：571 / 573

页数：3

共 50 条

[1] INFRARED AND THERMAL QUENCHING OF PHOTOCONDUCTIVITY OF MANGANESE-DOPED SILICON
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[2] INSTABILITY OF A CURRENT ASSOCIATED WITH RECOMBINATION WAVES IN MANGANESE-COMPENSATED SILICON
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[3] INFLUENCE OF GAMMA-IRRADIATION ON THE ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF MANGANESE-COMPENSATED SILICON
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[4] INFLUENCE OF gamma IRRADIATION ON THE ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF MANGANESE-COMPENSATED SILICON.
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[5] SHORT-WAVELENGTH QUENCHING OF IMPURITY PHOTOCONDUCTIVITY OF COMPENSATED SILICON
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[6] LOW-FREQUENCY LARGE-AMPLITUDE OSCILLATIONS OF THE CURRENT IN MANGANESE-COMPENSATED SILICON
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[7] EXCITATION OF RECOMBINATION WAVES IN MANGANESE-COMPENSATED SILICON UNDER UNIAXIAL ELASTIC-DEFORMATION CONDITIONS
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[8] ON THERMAL QUENCHING OF THE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON
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[9] QUENCHING OF PHOTOCONDUCTIVITY IN SILICON
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[10] THERMAL AND FIELD QUENCHING OF PHOTOCONDUCTIVITY IN NI-DOPED SILICON
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