ELECTROMIGRATION AND CREVICE FORMATION IN THIN METALLIC FILMS

被引:37
作者
BLECH, IA
机构
关键词
D O I
10.1016/0040-6090(72)90164-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:117 / &
相关论文
共 36 条
[1]  
AGRAWALA BN, 1970, J APPL PHYS, V41, P3954
[2]   COATING, MECHANICAL CONSTRAINTS, AND PRESSURE EFFECTS ON ELECTROMIGRATION [J].
AINSLIE, NG ;
WELLS, OC ;
DHEURLE, FM .
APPLIED PHYSICS LETTERS, 1972, 20 (04) :173-&
[3]   REDUCTION OF ELECTROMIGRATION IN ALUMINUM FILMS BY COPPER DOPING [J].
AMES, I ;
DHEURLE, FM ;
HORSTMANN, RE .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) :461-+
[4]  
ANSTEAD RJ, 1969, IEEE T ELECTRON DEVI, VED16, P381
[5]   ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS [J].
ATTARDO, MJ ;
ROSENBERG, R .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) :2381-+
[6]   SURFACE TOPOLOGY CHANGES DURING ELECTROMIGRATION IN METALLIC THIN FILM STRIPES [J].
BERENBAUM, L ;
ROSENBERG, R .
THIN SOLID FILMS, 1969, 4 (03) :187-+
[7]  
BERENBAUM L, 1971, 9 P ANN IEEE REL PHY
[8]   SUPERIOR ALUMINUM FOR INTERCONNECTIONS OF INTEGRATED CIRCUITS [J].
BHATT, HJ .
APPLIED PHYSICS LETTERS, 1971, 19 (02) :30-&
[9]  
BLACK JR, 1969, IEEE T ELECTRON DEVI, VED16, P338
[10]   ELECTROMIGRATION-INDUCED FAILURES IN, AND MICROSTRUCTURE AND RESISTIVITY OF, SPUTTERED GOLD FILMS [J].
BLAIR, JC ;
GHATE, PB ;
FULLER, CR ;
HAYWOOD, CT .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :307-&