FORMATION OF GALLIUM INTERSTITIALS DURING ZINC DIFFUSION INTO GALLIUM-ARSENIDE

被引：39

作者：

BALL, RK

HUTCHINSON, PW

DOBSON, PS

机构：

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1981年 / 43卷 / 05期

关键词：

D O I：

10.1080/01418618108236158

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1299 / 1314

页数：16

共 22 条

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[2] MICROSCOPY OF SEMI-INSULATING GALLIUM-ARSENIDE
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[3] DECORATED DISLOCATIONS AND SUB-SURFACE DEFECTS INDUCED IN GAAS BY IN-DIFFUSION OF ZINC
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 188 - +
[4] PRECIPITATES INDUCED IN GAAS BY IN-DIFFUSION OF ZINC
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JUNGBLUTH, ED
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 181 - +
[5] CASEY HC, 1968, T METALL SOC AIME, V242, P406
[6] DIFFUSION OF ZINC IN GALLIUM ARSENIDE
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[7] SEM AND TEM STUDIES OF DEFECTS IN SI-DOPED GAAS SUBSTRATE MATERIAL BEFORE AND AFTER ZN DIFFUSION
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AUGUSTUS, PD
BOOKER, GR
STIRLAND, DJ
[J]. JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (MAR): : 343 - 349
[8] ANNEALING-INDUCED PRISMATIC DISLOCATION LOOPS AND ELECTRICAL CHANGES IN HEAVILY TE-DOPED GAAS
HUGHES, B
NARAYANAN, GH
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 46 (02): : 627 - 637
[9] SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GAAS .1. TELLURIUM DOPING
HURLE, DTJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) : 627 - 637
[10] INTERSTITIAL CONDENSATION IN N+ GAAS
HUTCHINSON, PW
DOBSON, PS
[J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (09) : 1636 - 1641

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