A NEW SI DOPING SOURCE FOR GAAS GROWTH BY MOLECULAR-BEAM EPITAXY

被引：3

作者：

HORIKOSHI, Y ^{[1
]}

FAHY, MR ^{[1
]}

KAWASHIMA, M ^{[1
]}

FURUKAWA, K ^{[1
]}

FUJINO, M ^{[1
]}

MATSUMOTO, N ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED, BLACKETT LAB, INTERDISCIPLINARY RES CTR SEMICOND MAT, LONDON SW7 2BZ, ENGLAND

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 3B期

关键词：

(TBUSI)8; GAAS; MBE; SI; DOPING; SIMS; SI CLUSTER;

D O I：

10.1143/JJAP.33.L413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new Si cluster material, tertiary-butyloctasilacubane (tBuSi)8, is used as an efficient Si doping source for molecular beam epitaxy of GaAs. The vapor pressure of this material varies according to an activation energy of 1.51 eV. A Si concentration of 2 x 10(20) /cm3 is obtained at a Si cluster cell temperature of 210-degrees-C and a GaAs growth rate of 1 mum/h. Although the grown layers suffer from heavy carbon contamination from the Si cluster, this problem can be alleviated by increasing the substrate temperature.

引用

收藏

页码：L413 / L416

页数：4

相关论文

共 14 条

[1]

ALFEROV ZI, 1982, SOV PHYS SEMICOND+, V16, P532

[2] SIH4 DOPING OF MBE GAAS AND ALXGA1-XAS [J].

BRIONES, F ;

GOLMAYO, D ;

GONZALEZ, L ;

DEMIGUEL, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :568-571

[3] OBSERVATIONS ON BAYARD-ALPERT ION GAUGE SENSITIVITIES TO VARIOUS GASES [J].

FLAIM, TA ;

OWNBY, PD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05) :661-&

[4] CUBIC SILICON CLUSTER [J].

FURUKAWA, K ;

FUJINO, M ;

MATSUMOTO, N .

APPLIED PHYSICS LETTERS, 1992, 60 (22) :2744-2745

[5]

HERMAN HA, 1988, MOL BEAM EPITAXY, P29

[6] GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY USING SILANE [J].

HIRAYAMA, H ;

TATSUMI, T ;

OGURA, A ;

AIZAKI, N .

APPLIED PHYSICS LETTERS, 1987, 51 (26) :2213-2215

[7] GROWTH OF SINGLE-CRYSTAL METASTABLE (GAAS)1-X(SI2)X ALLOYS ON GAAS AND (GAAS)1-X(SI2)X/GAAS STRAINED-LAYER SUPERLATTICES [J].

MEI, DH ;

KIM, YW ;

LUBBEN, D ;

ROBERTSON, IM ;

GREENE, JE .

APPLIED PHYSICS LETTERS, 1989, 55 (25) :2649-2651

[8] THE CALIBRATION OF THE STRENGTH OF THE LOCALIZED VIBRATIONAL-MODES OF SILICON IMPURITIES IN EPITAXIAL GAAS REVEALED BY INFRARED-ABSORPTION AND RAMAN-SCATTERING [J].

MURRAY, R ;

NEWMAN, RC ;

SANGSTER, MJL ;

BEALL, RB ;

HARRIS, JJ ;

WRIGHT, PJ ;

WAGNER, J ;

RAMSTEINER, M .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) :2589-2596

[9] OPTICAL-ABSORPTION IN SINGLE-CRYSTAL METASTABLE (GAAS)1-X(GE2)X ALLOYS - EVIDENCE FOR A ZINC-BLENDE-DIAMOND ORDER-DISORDER TRANSITION [J].

NEWMAN, KE ;

LASTRASMARTINEZ, A ;

KRAMER, B ;

BARNETT, SA ;

RAY, MA ;

DOW, JD ;

GREENE, JE ;

RACCAH, PM .

PHYSICAL REVIEW LETTERS, 1983, 50 (19) :1466-1469

[10] MIGRATION ENHANCED EPITAXY GROWTH OF GAAS ON SI WITH (GAAS)1-X(SI2)X/GAAS STRAINED LAYER SUPERLATTICE BUFFER LAYERS [J].

RAO, TS ;

NOZAWA, K ;

HORIKOSHI, Y .

APPLIED PHYSICS LETTERS, 1993, 62 (02) :154-156