Resonant Tunneling in Y(Dy)Ba2Cu3O7-delta/PrBa2Cu3-xGaxO7-delta/Y(Dy)Ba2Cu3O7-delta Ramp-Type Josephson Junctions

被引：14

作者：

Golubov, A. A. ^{[1
,2
]}

Verhoeven, M. A. J. ^{[1
]}

Devyatov, I. A. ^{[3
]}

Kupriyanov, M. Yu. ^{[3
]}

Gerritsma, G. J. ^{[1
]}

Rogalla, H. ^{[1
]}

机构：

[1] Univ Twente, Dept Appl Phys, NL-7500 AE Enschede, Netherlands

[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia

[3] Moscow State Univ, Inst Nucl Phys, Moscow, Russia

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 1994年 / 235-40卷

关键词：

D O I：

10.1016/0921-4534(94)91157-6

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated both experimentally and theoretically the normal state resistance and Josephson critical current of ramp-type Josephson junctions having YBCO (DyBCO) electrodes and 8-30 nm thick Ga-doped barriers PrBa2Cu3-xGaxO7-delta with Ga content x = 0, 0.05 and 0.1. Analysis of the data shows that the behavior of the junctions can be well described by the model assuming transport through a finite number of localized states in the barrier.

引用

页码：3261 / 3262

页数：2

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