ELECTRONIC PROCESSES ON THE SURFACE OF AS-SE CHALCOGENIDE GLASSY SEMICONDUCTORS

被引：5
作者：
MAMONTOVA, TN [1 ]
KOCHEMIROVSKII, AS [1 ]
PIVOVAROVA, LV [1 ]
机构：
[1] VI LENIN POLYTECH INST,KHARKOV,UKRAINE,USSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 107卷 / 01期
关键词：
ELECTROPHYSICAL PROPERTIES - LAPPING - PHOTOELECTRON WORK FUNCTION - SEMICONDUCTING ARSENIDE COMPOUNDS - SURFACE TREATMENT - TRAP DENSITY;
D O I：
10.1002/pssa.2211070102
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：11 / 43
页数：33
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