GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS

[1] A VAPOR-GROWN VARIABLE CAPACITANCE DIODE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 264 - 268

[2] ANDERSON RL, UNPUB APPARATUS DETE

[3] ARMSTRONG HL, 1958, P IRE, V46, P1307

[4] BETHE HA, 1942, NDRC4312 REP

[5] BOHM DJ, 1951, QUANTUM THEORY, P278

[6] COURANT ED, 1943, THESIS U ROCHESTER

[7] DUNLAP WC, 1956, B AM PHYS SOC, V1, P294

[8] TUNNEL DIODES BY VAPOR GROWTH OF GE ON GE AND ON GAAS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 280 - 282

[9] Simplified and advanced Theory of the Boundary Layer Rectifiers [J]. ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10): : 539 - 592

[10] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489

[1] A VAPOR-GROWN VARIABLE CAPACITANCE DIODE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 264 - 268

[2] ANDERSON RL, UNPUB APPARATUS DETE

[3] ARMSTRONG HL, 1958, P IRE, V46, P1307

[4] BETHE HA, 1942, NDRC4312 REP

[5] BOHM DJ, 1951, QUANTUM THEORY, P278

[6] COURANT ED, 1943, THESIS U ROCHESTER

[7] DUNLAP WC, 1956, B AM PHYS SOC, V1, P294

[8] TUNNEL DIODES BY VAPOR GROWTH OF GE ON GE AND ON GAAS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 280 - 282

[9] Simplified and advanced Theory of the Boundary Layer Rectifiers [J]. ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10): : 539 - 592

[10] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489