QUANTUM-THEORY OF FREE CARRIER ABSORPTION IN POLAR SEMICONDUCTORS

被引:54
作者
JENSEN, B [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1016/0003-4916(73)90107-3
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
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页码:284 / 360
页数:77
相关论文
共 31 条
[1]  
Bjorken JD., 1964, RELATIVISTIC QUANTUM
[2]   FREE-CARRIER ABSORPTION IN N-TYPE INDIUM ARSENIDE [J].
CULPEPPE.RM ;
DIXON, JR .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1968, 58 (01) :96-&
[3]   BAND NONPARABOLICITY EFFECT UPON FREE CARRIER ABSORPTION [J].
DEMIDENKO, ZA .
SOLID STATE COMMUNICATIONS, 1970, 8 (07) :533-+
[4]  
DIXON J, 1961, P INT C SEMICONDUCTO, P366
[5]   QUANTUM THEORY OF FREE CARRIER ABSORPTION [J].
DUMKE, WP .
PHYSICAL REVIEW, 1961, 124 (06) :1813-&
[6]  
DUMKE WP, 1970, PHYS REV B, V12, P4668
[7]   ELECTRON SCATTERING IN INSB [J].
EHRENREICH, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (02) :131-149
[8]   ELECTRON MOBILITY OF INDIUM ARSENIDE PHOSPHIDE [IN(ASYP1-Y)] [J].
EHRENREICH, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (01) :97-104
[9]   TRANSPORT OF ELECTRONS IN INTRINSIC INSB [J].
EHRENREICH, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (02) :129-148
[10]   BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].
EHRENREICH, H .
PHYSICAL REVIEW, 1960, 120 (06) :1951-1963