COPPER METALLIZATION TECHNOLOGY FOR DEEP-SUBMICRON ULSIS

被引：26

作者：

ARITA, Y

AWAYA, N

OHNO, K

SATO, M

机构：

来源：

MRS BULLETIN | 1994年 / 19卷 / 08期

关键词：

D O I：

10.1557/S0883769400047771

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：68 / 74

页数：7

共 30 条

[1]

Arita Y., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P39, DOI 10.1109/IEDM.1990.237231

[2]

Arita Y., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P893, DOI 10.1109/IEDM.1989.74198

[3]

Arita Y., 1992, Oyo Buturi, V61, P1156

[4]

ARITA Y, 1994, INT C ADV MICROELECT, P85

[5]

AWAYA N, 1989, VLSI TECH S KYOTO, P35

[6]

AWAYA N, 1993, S VLSI TECH KYOTO, P125

[7] CHEMICAL VAPOR-DEPOSITED COPPER FROM ALKYNE STABILIZED COPPER(I) HEXAFLUOROACETYLACETONATE COMPLEXES [J].

BAUM, TH ;

LARSON, CE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (01) :154-159

[8] SELECTIVITY AND COPPER CHEMICAL VAPOR-DEPOSITION [J].

DUBOIS, LH ;

ZEGARSKI, BR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (11) :3295-3299

[9]

Farkas J., 1992, Advanced Metallization for ULSI Applications (Formerly Workshop on Tungsten and Other Advanced Metals for ULSI Applications) Proceedings of the Conference, P445

[10]

GELATOS AV, 1993, S VLSI TECH KYOTO, P123

← 1 2 3 →