LOW-FREQUENCY NOISE BEHAVIOR OF GAMMA-IRRADIATED PARTIALLY DEPLETED SILICON-ON-INSULATOR N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

被引：5
|
作者：
SIMOEN, E
CLAEYS, C
机构：
[1] IMEC, B-3001 Leuven
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 12期
关键词：
D O I：
10.1063/1.110733
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This letter discusses the low-frequency noise behavior of partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor transistors after gamma irradiation to a total dose of 100 krad(Si). The noise characteristics both in linear operation and in saturation are investigated in detail. It is shown that the increase of the noise in the linear region is mainly due to the degradation of the sidewall isolation regions. In contrast, the so-called kink-related noise overshoot is hardly affected by the irradiation, indicating that its origin is most likely not interface related. This result will be discussed in view of a recently proposed model for the noise overshoot.
引用
收藏
页码：1672 / 1674
页数：3
相关论文
共 50 条
  • [1] EMPIRICAL RELATIONSHIP BETWEEN THE LOW-FREQUENCY NOISE SPECTRAL DENSITY AND THE TRANSCONDUCTANCE OF SILICON-ON-INSULATOR N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
    SIMOEN, E
    CLAEYS, C
    APPLIED PHYSICS LETTERS, 1994, 65 (15) : 1946 - 1948
  • [2] THE LOW-FREQUENCY NOISE OVERSHOOT IN PARTIALLY DEPLETED N-CHANNEL SILICON-ON-INSULATOR TWIN-MOSTS
    SIMOEN, E
    SMEYS, PIL
    CLAEYS, C
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) : 1972 - 1976
  • [3] LOW-FREQUENCY NOISE CHARACTERIZATION OF GAMMA-IRRADIATED SILICON-ON-INSULATOR MOSFETS
    SIMOEN, E
    CLAEYS, C
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 95 (01): : 75 - 81
  • [4] Behavior of Low-Frequency Noise in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors for Different Impurity Concentrations
    Hettiarachchi, Ranga
    Matsuki, Takeo
    Feng, Wei
    Yamada, Keisaku
    Ohmori, Kenji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (10)
  • [5] Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal-oxide-semiconductor field-effect transistors
    Mercha, A
    Simoen, E
    van Meer, H
    Claeys, C
    APPLIED PHYSICS LETTERS, 2003, 82 (11) : 1790 - 1792
  • [6] Degradation of low-frequency noise in partially depleted silicon-on-insulator metal oxide semiconductor field-effect transistors by hot-carrier stress
    Chen, KM
    Hu, HH
    Huang, GW
    Chang, CY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (6A): : 3832 - 3835
  • [7] Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown
    Chen, MJ
    Kang, TK
    Lee, YH
    Liu, CH
    Chang, YJ
    Fu, KY
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) : 648 - 653
  • [8] Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment
    Zhou Hang
    Cui Jiang-Wei
    Zheng Qi-Wen
    Guo Qi
    Ren Di-Yuan
    Yu Xue-Feng
    ACTA PHYSICA SINICA, 2015, 64 (08)
  • [9] Channel-width dependence of low-frequency noise in process tensile-strained n-channel metal-oxide-semiconductor transistors
    Lu, MP
    Lee, WC
    Chen, MJ
    APPLIED PHYSICS LETTERS, 2006, 88 (06)
  • [10] Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors
    彭超
    张正选
    胡志远
    黄辉祥
    宁冰旭
    毕大炜
    Chinese Physics Letters, 2013, 30 (09) : 189 - 193
12345