ELECTRICAL-CONDUCTION IN THE SI(111)-B-(SQUARE-ROOT-3 X SQUARE-ROOT-3)R 30-DEGREES/ALPHA-SI INTERFACE RECONSTRUCTION

被引：20

作者：

HEADRICK, RL

LEVI, AFJ

LUFTMAN, HS

KOVALCHICK, J

FELDMAN, LC

机构：

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.43.14711

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

One-third of a monolayer of spatially ordered boron on (111)-oriented crystalline silicon is prepared in ultrahigh vacuum and then buried under a thin layer of amorphous silicon. This leaves a two-dimensional (square-root 3 x square-root 3) boron layer in substitutional sites confined to a single monolayer on the crystalline side of the interface. We report electrical conductivity with a high p-type carrier density (> 10(14)/cm2) in an ordered two-dimensional interface layer.

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页码：14711 / 14714

页数：4

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