ANNEALING MECHANISM OF RADIATION-DAMAGE AND DOPANTS IN PULSED LASER-LIGHT IRRADIATED ION-IMPLANTED LAYERS

被引：5
作者：
HEYWANG, W
KRIMMEL, EF
RUNGE, H
机构：
[1] Zentrale Forschung Und Entwicklung Der Siemens Ag, Munchen
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 51卷 / 01期
关键词：
D O I：
10.1002/pssa.2210510154
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K79 / K82
页数：4
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