SUBQUARTER-MICROMETER GATE-LENGTH P-CHANNEL AND N-CHANNEL MOSFETS WITH EXTREMELY SHALLOW SOURCE-DRAIN JUNCTIONS

被引：27
作者：
MIYAKE, M [1 ]
KOBAYASHI, T [1 ]
OKAZAKI, Y [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO, TOKYO 180, JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 02期
关键词：
D O I：
10.1109/16.19941
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：392 / 398
页数：7
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