CYCLOTRON-RESONANCE OF ELECTRONS IN SI N-INVERSION LAYERS AT LOW-DENSITIES - MANY-BODY EFFECTS OR LOCALIZATION

被引：4

作者：

CHENG, JP ^{[1
]}

JAROSIK, NC ^{[1
]}

MCCOMBE, BD ^{[1
]}

WOO, KC ^{[1
]}

机构：

[1] UNIV ILLINOIS,CHICAGO,IL 60680

来源：

SURFACE SCIENCE | 1988年 / 196卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(88)90693-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：268 / 272

页数：5

共 15 条

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[3]

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[6] MANY-BODY EFFECTS ON THE CYCLOTRON-RESONANCE IN A TWO-DIMENSIONAL ELECTRON-GAS [J].

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[7]

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[8] CYCLOTRON-RESONANCE OF LOCALIZED ELECTRONS ON A SI SURFACE [J].

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[9]

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[10] CALCULATION OF THE CYCLOTRON-RESONANCE LINEWIDTH IN GAAS-ALGAAS HETEROSTRUCTURES [J].

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SOLID STATE COMMUNICATIONS, 1983, 47 (12) :959-963

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