LOW-FREQUENCY NOISE IN SCHOTTKY-BARRIER DIODES

被引：4
作者：
ANAND, Y
机构：
[1] Microwave Associates. Inc., Burlington., Mass.
来源：
PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 05期
关键词：
D O I：
10.1109/PROC.1969.7124
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon Schottky-barrier diodes have been developed which simulate the performance of point-contact (1 N23WE) diodes in the standard mounts. These diodes along with 1 N23 point-contact and back diodes were examined under 9.375 GHz excitation for noise temperature over the IF range of 5 kHz to 180 kHz. The Schottky diodes had noise temperatures comparable to and often lower than the back diodes. This fact. together with lower conversion loss and convenient impedance levels, makes the Schottky barrier diodes generally advantageous in Doppler radars and similar applications. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.
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页码：855 / &
相关论文
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