MEASUREMENT OF HOLE VELOCITY IN N-TYPE INGAAS

被引：67

作者：

HILL, P

SCHLAFER, J

POWAZINIK, W

URBAN, M

EICHEN, E

OLSHANSKY, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 18期

关键词：

D O I：

10.1063/1.97877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1260 / 1262

页数：3

共 9 条

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[2]

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[5]

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[6] FREQUENCY-RESPONSE OF AN INGAASP VAPOR-PHASE REGROWN BURIED HETEROSTRUCTURE LASER WITH 18 GHZ BANDWIDTH [J].

OLSHANSKY, R ;

LANZISERA, V ;

SU, CB ;

POWAZINIK, W ;

LAUER, RB .

APPLIED PHYSICS LETTERS, 1986, 49 (03) :128-130

[7] LIQUID-PHASE EPITAXIAL-GROWTH, ELECTRON-MOBILITY AND MAXIMUM DRIFT VELOCITY OF IN1-XGAXAS (X ALMOST EQUAL TO 0.5) FOR MICROWAVE DEVICES [J].

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SHIKAGAWA, N ;

TAKAGI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :239-243

[8] 20 GHZ BANDWIDTH INGAAS PHOTODETECTOR FOR LONG-WAVELENGTH MICROWAVE OPTICAL LINKS [J].

SCHLAFER, J ;

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LAUER, RB .

ELECTRONICS LETTERS, 1985, 21 (11) :469-471

[9]

WINDHORN TH, 1982, ELECTRON DEVIC LETT, V3, P18, DOI 10.1109/EDL.1982.25459

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