SPIN-DEPENDENT PHOTOCONDUCTIVITY IN N-TYPE AND P-TYPE AMORPHOUS SILICON

被引：74

作者：

SOLOMON, I

BIEGELSEN, D

KNIGHTS, JC

机构：

[1] ECOLE POLYTECH,PHYS MATIERE CONDENSEE LAB,F-91128 PALAISEAU,FRANCE

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 22卷 / 08期

关键词：

D O I：

10.1016/0038-1098(77)91402-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：505 / 508

页数：4

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[9] SPIN-DEPENDENT RECOMBINATION ON SILICON SURFACE [J].

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[10] LOW-TEMPERATURE OXIDATION OF SILICON STUDIED BY PHOTOSENSITIVE ESR AND AUGER-ELECTRON SPECTROSCOPY [J].

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