GROWTH OF DIAMOND BY LASER-ABLATION OF GRAPHITE

被引：13
作者：
POLO, MC
CIFRE, J
SANCHEZ, G
AGUIAR, R
VARELA, M
ESTEVE, J
机构：
[1] Dept. Fisica Aplicada i Electrònica, Universitat de Barcelona, E-08028 Barcelona
来源：
DIAMOND AND RELATED MATERIALS | 1995年 / 4卷 / 5-6期
关键词：
LASER-ASSISTED PVD; DIAMOND; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY;
D O I：
10.1016/0925-9635(94)05270-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin film growth by laser ablation deposition has been established as a useful method for obtaining films of novel materials on different substrates. The high energy of the emitted particles in the ablation process could be used to obtain diamond thin films at relatively low substrate temperatures. We tried this technique to grow carbon films with a high amount of diamond phases from a pyrolytic graphite target. The laser is an excimer laser (ArF, lambda = 193 nm) focused at a fluence of 3 J cm(-2) and operating at 5 Hz repetition rate. The films were grown on (100) silicon substrates at 450 degrees C. The films were deposited under (a) vacuum conditions, (b) 1 mbar of hydrogen or (c) 1 mbar of helium to determine the influence of a gas atmosphere in the growth process. Scanning electron microscopy demonstrated the growth of diamond on silicon substrates with crystals as big as 20 mu m. Raman spectroscopy studies of the films showed the peak at 1332 cm(-1) characteristic of the diamond structure, even for vacuum deposition conditions.
引用
收藏
页码：780 / 783
页数：4
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