EFFECT OF IMPURITY-CORE ON CARRIER MOBILITY IN HEAVILY DOPED GERMANIUM

被引：16

作者：

CSAVINSZKY, P

机构：

来源：

关键词：

D O I：

10.1143/JPSJ.16.1865

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1865 / &

共 8 条

[1]

DINGLE RB, 1955, PHILOS MAG, V46, P831

[2] NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J].

ERGINSOY, C .

PHYSICAL REVIEW, 1950, 79 (06) :1013-1014

[3] ABSORPTION SPECTRA OF GROUP-V DONORS IN GERMANIUM [J].

FAN, HY ;

FISHER, P .

[4] TUNNELING PROBABILITY IN GERMANIUM P-N JUNCTIONS [J].

FURUKAWA, Y .

[5]

KOHN W, 1957, SOLID STATE PHYSICS, V5

[6]

SCHIFF LI, 1955, QUANTUM MECHANICS, P161

[7]

SEITZ F, 1957, SOLID STATE PHYSICS, V5

[8] MAGNETISM OF INTERACTING DONORS [J].

SONDER, E ;

SCHWEINLER, HC .

PHYSICAL REVIEW, 1960, 117 (05) :1216-1221