EXCITONIC MOLECULE BOUND TO ISOELECTRONIC TRAP NITROGEN IN GALLIUM PHOSPHIDE

被引：13

作者：

FAULKNER, RA

MERZ, JL

DEAN, PJ

机构：

[1] Bell Telephone Laboratories, Murray Hill, NJ

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 11期

关键词：

D O I：

10.1016/0038-1098(69)90772-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Two sets of sharp emission lines associated with the photoluminescence spectrum of the isoelectronic trap nitrogen in GaP are unambiguously identified as the recombination radiation of a second exciton bound to this center with an energy of ∼ 10 meV. This is the first observation of an excitonic molecule bound to a defect. © 1969.

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页码：831 / &

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