PROPERTIES OF DEEP CU LEVELS IN GAP

被引:15
作者
GRIMMEISS, HG
MONEMAR, B
SAMUELSON, L
机构
关键词
D O I
10.1016/0038-1101(78)90232-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1505 / 1508
页数:4
相关论文
共 20 条
[1]   SOME PROPERTIES OF COPPER-DOPED GALLIUM PHOSPHIDE [J].
ALLEN, JW ;
CHERRY, RJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (MAY) :509-&
[2]  
BERNDT W, 1975, JETP LETT+, V22, P284
[3]   COMPLEX FORM OF DONOR ENERGY-LEVELS IN GALLIUM-PHOSPHIDE [J].
CARTER, AC ;
DEAN, PJ ;
SKOLNICK, MS ;
STRADLING, RA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (24) :5111-5129
[4]  
Dean P. J., 1973, Journal of Luminescence, V7, P51, DOI 10.1016/0022-2313(73)90059-8
[5]   THERMALLY STIMULATED CURRENT MEASUREMENTS AND THEIR CORRELATION WITH EFFICIENCY AND DEGRADATION IN GAP LEDS [J].
FABRE, E ;
BHARGAVA, RN .
APPLIED PHYSICS LETTERS, 1974, 24 (07) :322-324
[6]  
FAGERSTROM PO, J APPL PHYS
[7]   CHARGE-CARRIER CAPTURE AND ITS EFFECT ON TRANSITION CAPACITANCE IN GAP-CU DIODES [J].
GRIMMEIS.HG ;
OLOFSSON, G .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) :2526-+
[8]  
GRIMMEISS HG, 1966, PHILIPS RES REP, V21, P246
[9]   SPECTRAL DEPENDENCE OF PHOTO-IONIZATION CROSS SECTIONS IN GAP-CU, O [J].
GRIMMEISS, HG ;
OTTOSSON, MO .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 5 (02) :481-+
[10]   SOME OPTICAL PROPERTIES OF CU IN GAP [J].
GRIMMEISS, HG ;
MONEMAR, B .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 19 (02) :505-511