LONG-TERM RELIABILITY TESTS FOR INGAAIP VISIBLE LASER-DIODES

被引：30

作者：

ISHIKAWA, M

OKUDA, H

ITAYA, K

SHIOZAWA, H

UEMATSU, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 09期

关键词：

D O I：

10.1143/JJAP.28.1615

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1615 / 1621

页数：7

共 11 条

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[4] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

ISHIKAWA, M ;

OHBA, Y ;

SUGAWARA, H ;

YAMAMOTO, M ;

NAKANISI, T .

APPLIED PHYSICS LETTERS, 1986, 48 (03) :207-208

[5]

Ishikawa M, 1986, 18TH INT C SOL STAT, P153

[6] A NEW TRANSVERSE-MODE STABILIZED INGAALP VISIBLE-LIGHT LASER DIODE USING P-P ISOTYPE HETEROBARRIER BLOCKING [J].

ITAYA, K ;

ISHIKAWA, M ;

WATANABE, Y ;

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UEMATSU, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2414-L2416

[7] EFFECT OF FACET COATING ON THE RELIABILITY OF INGAAIP VISIBLE-LIGHT LASER-DIODES [J].

ITAYA, K ;

ISHIKAWA, M ;

OKUDA, H ;

WATANABE, Y ;

NITTA, K ;

SHIOZAWA, H ;

UEMATSU, Y .

APPLIED PHYSICS LETTERS, 1988, 53 (15) :1363-1365

[8] ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS [J].

KOBAYASHI, K ;

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SUZUKI, T .

ELECTRONICS LETTERS, 1985, 21 (20) :931-932

[9] ZN DOPING CHARACTERISTICS FOR INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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APPLIED PHYSICS LETTERS, 1988, 53 (22) :2182-2184

[10] GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS [J].

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ISHIKAWA, M ;

SUGAWARA, H ;

YAMAMOTO, M ;

NAKANISI, T .

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