ELECTRON-SPIN RESONANCE OF INHERENT AND PROCESS INDUCED DEFECTS NEAR THE SI/SIO2 INTERFACE OF OXIDIZED SILICON-WAFERS

被引：47
作者：
POINDEXTER, EH
CAPLAN, PJ
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1988年 / 6卷 / 03期
关键词：
D O I：
10.1116/1.575701
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
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页码：1352 / 1357
页数：6
相关论文
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